Abstract
The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.
| Original language | English |
|---|---|
| Pages (from-to) | 7624-7629 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry Letters |
| Volume | 11 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 17 Sept 2020 |
| Externally published | Yes |