@inproceedings{c308c9d859f0403cb46a2d7ffb346d84,
title = "Effects of substrate on the AC performance of submicron GaN HEMTs",
abstract = "This paper presents a comparative study of AC performance of AlN/GaN/AlGaN high electron mobility transistor (HEMT) on Si and SiC substrates. It has been demonstrated that Si/SiC substrate offers a nominal change in the AC performance of the device. Also, Si/SiC based AlN/GaN/AlGaN HEMTs AC performance with and without substrate distributed network is assessed using particle swarm optimization technique and compared with experimental data. Equivalent intrinsic small signal parameters are extracted for both the substrates, which showed a minor change in the intrinsic small signal parameters values. Thus, Si substrate may comfortably be employed in the fabrication of AlN/GaN/AlGaN HEMT to make it cost effective.",
keywords = "AC performance, AlN/GaN/AlGaN, High electron mobility transistors, Particle swarm optimization, Small signal parameters",
author = "S. Rehman and U. Rafique and Ahmed, \{U. F.\} and Khan, \{M. N.\} and Ahmed, \{M. M.\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 13th International Conference on Emerging Technologies, ICET2017 ; Conference date: 27-12-2017 Through 28-12-2017",
year = "2017",
month = jul,
day = "2",
doi = "10.1109/ICET.2017.8281750",
language = "English",
series = "Proceedings - 2017 13th International Conference on Emerging Technologies, ICET2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--7",
booktitle = "Proceedings - 2017 13th International Conference on Emerging Technologies, ICET2017",
}