Effects of spacer thickness on noise performance of bipolar transistors

Wai Kit Lee; Sang Lam; Mansun Chan

doi:10.1109/TED.2004.833959

Effects of spacer thickness on noise performance of bipolar transistors

Wai Kit Lee^*
, Sang Lam
, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NF_min) derived from the Y-parameters as well as the base (r_B) and emitter resistance (r_E) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (R_n), optimum source admittance (Y_sop), and the associated gain (G_A,assc) are also given in this brief. To achieve the minimum value of NF_min, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.

Original language	English
Pages (from-to)	1534-1537
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	9
DOIs	https://doi.org/10.1109/TED.2004.833959
Publication status	Published - 1 Sept 2004
Externally published	Yes

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title = "Effects of spacer thickness on noise performance of bipolar transistors",

abstract = "The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.",

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AU - Lam, Sang

AU - Chan, Mansun

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N2 - The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.

AB - The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.

UR - https://www.scopus.com/pages/publications/4444361529

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DO - 10.1109/TED.2004.833959

M3 - Article

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VL - 51

SP - 1534

EP - 1537

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Effects of spacer thickness on noise performance of bipolar transistors

Abstract

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