Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

Yutao Cai; Yang Wang; Ye Liang; Yuanlei Zhang; Wen Liu; Huiqing Wen; Ivona Z. Mitrovic; Cezhou Zhao

doi:10.1109/ACCESS.2020.2995906

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

Yutao Cai
, Yang Wang
, Ye Liang
, Yuanlei Zhang
, Wen Liu
, Huiqing Wen
, Ivona Z. Mitrovic
, Cezhou Zhao^*

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University
University of Liverpool

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

In this paper, the GaN-based MIS-HEMTs with Si₃N₄ single-layer passivation, Al₂O₃/SiN_x bilayer passivation, and ZrO₂/SiN_x bilayer passivation are demonstrated. High-k dielectrics are adopted as the passivation layer on MIS-HEMTs to suppress the shallow traps on the GaN surface. Besides, high permittivity dielectrics passivated MIS-HEMTs also show an improved breakdown voltage characteristic, and that is explained by 2-D simulation analysis. The fabricated devices with high-k dielectrics/SiN_x bilayer passivation exhibit higher power properties than the devices with plasma enhanced chemical vapor deposition-SiN_x single layer passivation, including smaller current collapse and higher breakdown voltage. The Al₂O₃/SiN_x passivated MIS-HEMTs exhibit a breakdown voltage of 1092 V, and the dynamic R_on is only 1.14 times the static R_on after off-state V_DS stress of 150 V. On the other hand, the ZrO₂/SiN_x passivated MIS-HEMTs exhibit a higher breakdown voltage of 1207 V, and the dynamic R_on is 1.25 times the static R_on after off-state V_DS stress of 150 V.

Original language	English
Article number	9098059
Pages (from-to)	95642-95649
Number of pages	8
Journal	IEEE Access
Volume	8
DOIs	https://doi.org/10.1109/ACCESS.2020.2995906
Publication status	Published - 2020

Keywords

AlGaN/GaN
AlO
MIS-HEMTs
SiN
ZrO
breakdown voltage
current collapse
dynamic on-resistance
high-k

Access to Document

10.1109/ACCESS.2020.2995906

Cite this

@article{7087915c7929461d881dfd784acb8460,

title = "Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices",

abstract = "In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated. High-k dielectrics are adopted as the passivation layer on MIS-HEMTs to suppress the shallow traps on the GaN surface. Besides, high permittivity dielectrics passivated MIS-HEMTs also show an improved breakdown voltage characteristic, and that is explained by 2-D simulation analysis. The fabricated devices with high-k dielectrics/SiNx bilayer passivation exhibit higher power properties than the devices with plasma enhanced chemical vapor deposition-SiNx single layer passivation, including smaller current collapse and higher breakdown voltage. The Al2O3/SiNx passivated MIS-HEMTs exhibit a breakdown voltage of 1092 V, and the dynamic Ron is only 1.14 times the static Ron after off-state VDS stress of 150 V. On the other hand, the ZrO2/SiNx passivated MIS-HEMTs exhibit a higher breakdown voltage of 1207 V, and the dynamic Ron is 1.25 times the static Ron after off-state VDS stress of 150 V.",

keywords = "AlGaN/GaN, AlO, MIS-HEMTs, SiN, ZrO, breakdown voltage, current collapse, dynamic on-resistance, high-k",

author = "Yutao Cai and Yang Wang and Ye Liang and Yuanlei Zhang and Wen Liu and Huiqing Wen and Mitrovic, \{Ivona Z.\} and Cezhou Zhao",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2020",

doi = "10.1109/ACCESS.2020.2995906",

language = "English",

volume = "8",

pages = "95642--95649",

journal = "IEEE Access",

issn = "2169-3536",

}

TY - JOUR

T1 - Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

AU - Cai, Yutao

AU - Wang, Yang

AU - Liang, Ye

AU - Zhang, Yuanlei

AU - Liu, Wen

AU - Wen, Huiqing

AU - Mitrovic, Ivona Z.

AU - Zhao, Cezhou

PY - 2020

Y1 - 2020

N2 - In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated. High-k dielectrics are adopted as the passivation layer on MIS-HEMTs to suppress the shallow traps on the GaN surface. Besides, high permittivity dielectrics passivated MIS-HEMTs also show an improved breakdown voltage characteristic, and that is explained by 2-D simulation analysis. The fabricated devices with high-k dielectrics/SiNx bilayer passivation exhibit higher power properties than the devices with plasma enhanced chemical vapor deposition-SiNx single layer passivation, including smaller current collapse and higher breakdown voltage. The Al2O3/SiNx passivated MIS-HEMTs exhibit a breakdown voltage of 1092 V, and the dynamic Ron is only 1.14 times the static Ron after off-state VDS stress of 150 V. On the other hand, the ZrO2/SiNx passivated MIS-HEMTs exhibit a higher breakdown voltage of 1207 V, and the dynamic Ron is 1.25 times the static Ron after off-state VDS stress of 150 V.

AB - In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated. High-k dielectrics are adopted as the passivation layer on MIS-HEMTs to suppress the shallow traps on the GaN surface. Besides, high permittivity dielectrics passivated MIS-HEMTs also show an improved breakdown voltage characteristic, and that is explained by 2-D simulation analysis. The fabricated devices with high-k dielectrics/SiNx bilayer passivation exhibit higher power properties than the devices with plasma enhanced chemical vapor deposition-SiNx single layer passivation, including smaller current collapse and higher breakdown voltage. The Al2O3/SiNx passivated MIS-HEMTs exhibit a breakdown voltage of 1092 V, and the dynamic Ron is only 1.14 times the static Ron after off-state VDS stress of 150 V. On the other hand, the ZrO2/SiNx passivated MIS-HEMTs exhibit a higher breakdown voltage of 1207 V, and the dynamic Ron is 1.25 times the static Ron after off-state VDS stress of 150 V.

KW - AlGaN/GaN

KW - AlO

KW - MIS-HEMTs

KW - SiN

KW - ZrO

KW - breakdown voltage

KW - current collapse

KW - dynamic on-resistance

KW - high-k

UR - https://www.scopus.com/pages/publications/85086070106

U2 - 10.1109/ACCESS.2020.2995906

DO - 10.1109/ACCESS.2020.2995906

M3 - Article

AN - SCOPUS:85086070106

SN - 2169-3536

VL - 8

SP - 95642

EP - 95649

JO - IEEE Access

JF - IEEE Access

M1 - 9098059

ER -

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this