Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation

T. S. Zhao; C. Zhao; C. Z. Zhao; W. Y. Xu; L. Yang; I. Z. Mitrovic; S. Hall; E. G. Lim; S. C. Yu

doi:10.1109/EUROSOI-ULIS45800.2019.9041879

Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation

T. S. Zhao
, C. Zhao
, C. Z. Zhao^*
, W. Y. Xu
, L. Yang
, I. Z. Mitrovic
, S. Hall
, E. G. Lim
, S. C. Yu

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University
University of Liverpool
Shenzhen University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm²·V^-1·s^-1 from 30 samples, which is a promising result for future applications.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041879
Publication status	Published - Apr 2019
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 1 Apr 2019 → 3 Apr 2019

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	1/04/19 → 3/04/19

Keywords

InO
Li incorporation
TFT
component
solution process

Access to Document

10.1109/EUROSOI-ULIS45800.2019.9041879

Cite this

Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., Hall, S., Lim, E. G., & Yu, S. C. (2019). Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 Article 9041879 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041879

Zhao, T. S. ; Zhao, C. ; Zhao, C. Z. et al. / Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

@inproceedings{1a52488e8c334452b2a2cede2b3523be,

title = "Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation",

abstract = "In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.",

keywords = "InO, Li incorporation, TFT, component, solution process",

author = "Zhao, \{T. S.\} and C. Zhao and Zhao, \{C. Z.\} and Xu, \{W. Y.\} and L. Yang and Mitrovic, \{I. Z.\} and S. Hall and Lim, \{E. G.\} and Yu, \{S. C.\}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

doi = "10.1109/EUROSOI-ULIS45800.2019.9041879",

language = "English",

series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

}

Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ, Hall, S, Lim, EG & Yu, SC 2019, Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041879, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 1/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041879

Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation. / Zhao, T. S.; Zhao, C.; Zhao, C. Z. et al.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041879 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation

AU - Zhao, T. S.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Xu, W. Y.

AU - Yang, L.

AU - Mitrovic, I. Z.

AU - Hall, S.

AU - Lim, E. G.

AU - Yu, S. C.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/4

Y1 - 2019/4

N2 - In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.

AB - In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.

KW - InO

KW - Li incorporation

KW - TFT

KW - component

KW - solution process

UR - https://www.scopus.com/pages/publications/85083232307

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041879

DO - 10.1109/EUROSOI-ULIS45800.2019.9041879

M3 - Conference Proceeding

AN - SCOPUS:85083232307

T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Y2 - 1 April 2019 through 3 April 2019

ER -

Zhao TS, Zhao C, Zhao CZ, Xu WY, Yang L, Mitrovic IZ et al. Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041879. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). doi: 10.1109/EUROSOI-ULIS45800.2019.9041879

Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation

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