Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Ye Liang, Xiuyuan He, Xi Feng, Yuanlei Zhang, Jie Zhang*, Wen Liu*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Material Science

Physics