Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.