@inproceedings{533a69a448e04c2eb8a94e283ae5ff9b,
title = "Dynamic Performance Analysis of Ultra-fast Inverter based on Tri-gate AlGaN/GaN MIS-HEMTs",
abstract = "This work demonstrates dynamic response characteristics of the tri-gate AlGaN/GaN high electron mobility transistor (HEMT) direct coupled FET logic (DCFL) inverter. The threshold voltage of the inverter is 2.74 V, the rise and fall time are 2.6 ns and 2.0 ns respectively with 1.8 ns and 0.2 ns propagation delay for each edge. The mechanisms for the excellent switching time performance are also revealed from the perspective of the device.",
keywords = "GaN, Logic circuit, Monolithic integration, Tri-gate MIS-HEMT",
author = "Yunsong Xu and Weisheng Wang and Dechang Quan and Haotian Ji and Shenlei Ding and Yunzhou Jiang and Low, \{Kain Lu\} and Jiangmin Gu and Wen Liu",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11040600",
language = "English",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
}