Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

C. Z. Zhao; M. Werner; S. Taylor; P. R. Chalker; A. C. Jones; Chun Zhao

doi:10.1007/s11671-010-9782-z

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

C. Z. Zhao
, M. Werner
, S. Taylor
, P. R. Chalker
, A. C. Jones
, Chun Zhao

University of Liverpool

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

Original language	English
Article number	48
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1007/s11671-010-9782-z
Publication status	Published - Jan 2011

Keywords

La

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10.1007/s11671-010-9782-z

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title = "Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient",

abstract = "La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (\textasciitilde{}32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.",

keywords = "La",

author = "Zhao, \{C. Z.\} and M. Werner and S. Taylor and Chalker, \{P. R.\} and Jones, \{A. C.\} and Chun Zhao",

note = "Funding Information: This research was funded in part from the Engineering and Physical Science Research Council of UK under the grant EP/D068606/1, the National Natural and Science Foundation of China under the grant no. 60976075, and the Suzhou Science and Technology Bureau of China under the grant SYG201007.",

year = "2011",

month = jan,

doi = "10.1007/s11671-010-9782-z",

language = "English",

volume = "6",

pages = "1--6",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

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TY - JOUR

T1 - Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

AU - Zhao, C. Z.

AU - Werner, M.

AU - Taylor, S.

AU - Chalker, P. R.

AU - Jones, A. C.

AU - Zhao, Chun

N1 - Funding Information: This research was funded in part from the Engineering and Physical Science Research Council of UK under the grant EP/D068606/1, the National Natural and Science Foundation of China under the grant no. 60976075, and the Suzhou Science and Technology Bureau of China under the grant SYG201007.

PY - 2011/1

Y1 - 2011/1

N2 - La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

AB - La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

KW - La

UR - https://www.scopus.com/pages/publications/79952706990

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DO - 10.1007/s11671-010-9782-z

M3 - Article

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SN - 1931-7573

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JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 48

ER -

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

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