TY - JOUR
T1 - Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
AU - Zhao, C. Z.
AU - Werner, M.
AU - Taylor, S.
AU - Chalker, P. R.
AU - Jones, A. C.
AU - Zhao, Chun
N1 - Funding Information:
This research was funded in part from the Engineering and Physical Science Research Council of UK under the grant EP/D068606/1, the National Natural and Science Foundation of China under the grant no. 60976075, and the Suzhou Science and Technology Bureau of China under the grant SYG201007.
PY - 2011/1
Y1 - 2011/1
N2 - La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.
AB - La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.
KW - La
UR - https://www.scopus.com/pages/publications/79952706990
U2 - 10.1007/s11671-010-9782-z
DO - 10.1007/s11671-010-9782-z
M3 - Article
AN - SCOPUS:79952706990
SN - 1931-7573
VL - 6
SP - 1
EP - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 48
ER -