Dielectric behaviors of ZnFe2O4, - SiO2 composite thin films prepared by sol-gel method

H. Jiang; H. W. Liu; H. Yu; F. Gao; J. M. Liu; C. W. Nan

doi:10.1142/S0217979205031523

Dielectric behaviors of ZnFe₂O₄, - SiO₂ composite thin films prepared by sol-gel method

H. Jiang
, H. W. Liu
, H. Yu
, F. Gao
, J. M. Liu^*
, C. W. Nan

^*Corresponding author for this work

Nanjing University
Tsinghua University
Nanjing University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The dielectric property of ZnFe₂O₄ - SiO₂ composite thin films deposited on Pt-Ti-SiO₂-Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe₂O₄ nanoparticles embedded in the matrix of SiO₂. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO₂ thin films without too large dielectric loss enhancement.

Original language	English
Pages (from-to)	2682-2686
Number of pages	5
Journal	International Journal of Modern Physics B
Volume	19
Issue number	15-17
DOIs	https://doi.org/10.1142/S0217979205031523
Publication status	Published - 10 Jul 2005
Externally published	Yes

Keywords

Dielectric capacitance
Magnetism
Nanoparticle

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10.1142/S0217979205031523

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title = "Dielectric behaviors of ZnFe2O4, - SiO2 composite thin films prepared by sol-gel method",

abstract = "The dielectric property of ZnFe2O4 - SiO2 composite thin films deposited on Pt-Ti-SiO2-Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.",

keywords = "Dielectric capacitance, Magnetism, Nanoparticle",

author = "H. Jiang and Liu, \{H. W.\} and H. Yu and F. Gao and Liu, \{J. M.\} and Nan, \{C. W.\}",

year = "2005",

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doi = "10.1142/S0217979205031523",

language = "English",

volume = "19",

pages = "2682--2686",

journal = "International Journal of Modern Physics B",

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TY - JOUR

T1 - Dielectric behaviors of ZnFe2O4, - SiO2 composite thin films prepared by sol-gel method

AU - Jiang, H.

AU - Liu, H. W.

AU - Yu, H.

AU - Gao, F.

AU - Liu, J. M.

AU - Nan, C. W.

PY - 2005/7/10

Y1 - 2005/7/10

N2 - The dielectric property of ZnFe2O4 - SiO2 composite thin films deposited on Pt-Ti-SiO2-Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.

AB - The dielectric property of ZnFe2O4 - SiO2 composite thin films deposited on Pt-Ti-SiO2-Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.

KW - Dielectric capacitance

KW - Magnetism

KW - Nanoparticle

UR - https://www.scopus.com/pages/publications/23944494640

U2 - 10.1142/S0217979205031523

DO - 10.1142/S0217979205031523

M3 - Article

AN - SCOPUS:23944494640

SN - 0217-9792

VL - 19

SP - 2682

EP - 2686

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 15-17

ER -

Dielectric behaviors of ZnFe₂O₄, - SiO₂ composite thin films prepared by sol-gel method

Abstract

Keywords

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