@inproceedings{13290352944f49d99dba71a4220a1bb8,
title = "Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC",
abstract = "In this paper, the GaN power IC platform is developed based on Au-free AlGaN/GaN MIS-HEMTs and a constant-output-ripple all GaN DC-DC buck converter IC is firstly realized with integrated gate driver, pulse width modulation (PWM) feedback control and over-current protection (OCP) circuits. The fabricated all GaN integrated DC-DC buck converter can realize stable 10 V output with constant output ripples when input voltage varies from 15 to 30 V. The output and ripples remain stable with varying load resistance. When subjected to over-current incident, the fabricated power IC can be protected according to desired over-current threshold values. The experiment results have demonstrated the functionality and feasibility of all GaN power ICs in power conversion applications.",
keywords = "AlGaN/GaN, Au-free, DC-DC buck converter, MIS-HEMT, integration",
author = "Ruize Sun and Liang, \{Y. C.\} and Yeo, \{Yee Chia\} and Cezhou Zhao and Wanjun Chen and Bo Zhang",
note = "Funding Information: The converter can maintain stable output against input line voltage variations from 20 V to values of 16\textasciitilde{}29 V, or load variations from 500 Ω to values of 300\textasciitilde{}700 Ω. When subjected to over-current incident, the converter can be switched off within one duty cycle period. The proposed GaN power IC platform can be adopted and all GaN DC-DC converters is promising in power conversion applications ACKNOWLEDGMENT This research is funded in part by the Sichuan Youth Science and Technology Foundation (No. 2017JQ0020), the Fundamental Research Funds for the Central Universities (No. ZYGX2016Z006), the Major science and technology special projects in Guangdong (No. 2017B010112003) and the National Natural Science Foundation of China (No. 51477108). Publisher Copyright: {\textcopyright} 2019 IEEE.; 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
month = may,
doi = "10.1109/ISPSD.2019.8757674",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "271--274",
booktitle = "2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019",
}