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Development of GaN Monolithic Integrated Circuits for Power Conversion

  • Yung C. Liang
  • , Ruize Sun
  • , Yee Chia Yeo
  • , Cezhou Zhao
    • National University of Singapore
    • National University of Singapore (Suzhou) Research Institute

    Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

    13 Citations (Scopus)

    Abstract

    This paper describes the development of a viable platform for the design of full GaN (Gallium Nitride) monolithic integrated circuits for power conversion applications. The Normally-on and normally-off AlGaN/GaN power HEMT devices are used for the integrated circuit design using the ADS (Advanced Design System) tool. A monolithic switched-mode DC-DC buck converter with integrated functional blocks and over-current protection is used to showcase the suitability of the development. The designed GaN power integrated circuit was fully fabricated and tested to verify its functionality in power conversion.

    Original languageEnglish
    Title of host publication2019 IEEE Custom Integrated Circuits Conference, CICC 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538693957
    DOIs
    Publication statusPublished - Apr 2019
    Event40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019 - Austin, United States
    Duration: 14 Apr 201917 Apr 2019

    Publication series

    NameProceedings of the Custom Integrated Circuits Conference
    Volume2019-April
    ISSN (Print)0886-5930

    Conference

    Conference40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019
    Country/TerritoryUnited States
    CityAustin
    Period14/04/1917/04/19

    Keywords

    • GaN Integrated Circuit
    • Power Integrated Circuit

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