@inproceedings{77cb93f9cc1c43669bb4a7950bccda10,
title = "Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator",
abstract = "As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.",
keywords = "GaN devices, comparator circuit, monolithic integration",
author = "Bangbo Sun and Huiqing Wen and Qingling Bu and Wen Liu",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",
year = "2019",
month = jun,
doi = "10.1109/ICICDT.2019.8790910",
language = "English",
series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
}