Demonstration of the p-GaN Gate HEMT with Crystalline GaOx/GaOxN1-xPassivation

Yuanlei Zhang; Jiachen Duan; Ye Liang; Weisheng Wang; Zhijie Kong; Jie Zhang; Wen Liu

doi:10.1109/ISPSD59661.2024.10579618

Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation

Yuanlei Zhang
, Jiachen Duan
, Ye Liang
, Weisheng Wang
, Zhijie Kong
, Jie Zhang
, Wen Liu

School of Advanced Technology

Xi'an Jiaotong-Liverpool University
University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

We investigate GaN HEMT devices with a crystalline GaO x/GaO xN1- xpassivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a GaO x/GaO xN1- xlayer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with GaO x/GaO xN1- xpassivation exhibit satisfactory characteristics at a PA temperature of 450°C with an ION/IOFFratio > 108. Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 μm. The results indicate the merits of employing GaO x/GaO xN1- xpassivation to realize the p-GaN HEMT.

Original language	English
Title of host publication	2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	303-306
Number of pages	4
ISBN (Electronic)	9798350394825
DOIs	https://doi.org/10.1109/ISPSD59661.2024.10579618
Publication status	Published - 2024
Event	36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Bremen, Germany Duration: 2 Jun 2024 → 6 Jun 2024

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024
Country/Territory	Germany
City	Bremen
Period	2/06/24 → 6/06/24

Keywords

HEMT
oxygen plasma treatment
p-GaN
passivation

Access to Document

10.1109/ISPSD59661.2024.10579618

Cite this

Zhang, Y., Duan, J., Liang, Y., Wang, W., Kong, Z., Zhang, J., & Liu, W. (2024). Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation. In 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings (pp. 303-306). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD59661.2024.10579618

Zhang, Yuanlei ; Duan, Jiachen ; Liang, Ye et al. / Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation. 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. pp. 303-306 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "Demonstration of the p-GaN Gate HEMT with Crystalline GaOx/GaOxN1-xPassivation",

abstract = "We investigate GaN HEMT devices with a crystalline GaO x/GaO xN1- xpassivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a GaO x/GaO xN1- xlayer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with GaO x/GaO xN1- xpassivation exhibit satisfactory characteristics at a PA temperature of 450°C with an ION/IOFFratio > 108. Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 μm. The results indicate the merits of employing GaO x/GaO xN1- xpassivation to realize the p-GaN HEMT.",

keywords = "HEMT, oxygen plasma treatment, p-GaN, passivation",

author = "Yuanlei Zhang and Jiachen Duan and Ye Liang and Weisheng Wang and Zhijie Kong and Jie Zhang and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",

year = "2024",

doi = "10.1109/ISPSD59661.2024.10579618",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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Zhang, Y, Duan, J, Liang, Y, Wang, W, Kong, Z, Zhang, J & Liu, W 2024, Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation. in 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., pp. 303-306, 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024, Bremen, Germany, 2/06/24. https://doi.org/10.1109/ISPSD59661.2024.10579618

Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation. / Zhang, Yuanlei; Duan, Jiachen; Liang, Ye et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. p. 303-306 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Demonstration of the p-GaN Gate HEMT with Crystalline GaOx/GaOxN1-xPassivation

AU - Zhang, Yuanlei

AU - Duan, Jiachen

AU - Liang, Ye

AU - Wang, Weisheng

AU - Kong, Zhijie

AU - Zhang, Jie

AU - Liu, Wen

PY - 2024

Y1 - 2024

N2 - We investigate GaN HEMT devices with a crystalline GaO x/GaO xN1- xpassivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a GaO x/GaO xN1- xlayer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with GaO x/GaO xN1- xpassivation exhibit satisfactory characteristics at a PA temperature of 450°C with an ION/IOFFratio > 108. Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 μm. The results indicate the merits of employing GaO x/GaO xN1- xpassivation to realize the p-GaN HEMT.

AB - We investigate GaN HEMT devices with a crystalline GaO x/GaO xN1- xpassivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a GaO x/GaO xN1- xlayer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with GaO x/GaO xN1- xpassivation exhibit satisfactory characteristics at a PA temperature of 450°C with an ION/IOFFratio > 108. Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 μm. The results indicate the merits of employing GaO x/GaO xN1- xpassivation to realize the p-GaN HEMT.

KW - HEMT

KW - oxygen plasma treatment

KW - p-GaN

KW - passivation

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EP - 306

BT - 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024

Y2 - 2 June 2024 through 6 June 2024

ER -

Zhang Y, Duan J, Liang Y, Wang W, Kong Z, Zhang J et al. Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation. In 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2024. p. 303-306. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD59661.2024.10579618