CMOS PWM Controller Design for GaN-Based 48V-1V DC-DC Buck Converter

Guanyu Wu; Miao Cui

doi:10.1109/ICICM66614.2025.11316028

CMOS PWM Controller Design for GaN-Based 48V-1V DC-DC Buck Converter

Guanyu Wu
, Miao Cui^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

Gallium Nitride (GaN) devices have seen increasing
adoption in applications such as space systems and data center
power management, owing to their superior efficiency, highfrequency
capabilities, and excellent thermal stability. The direct
48V-to-1V GaN converters are emerging as promising
alternatives to conventional two-stage voltage regulation. This
direct approach offers significant advantages in offering high
power density and enhancing transient response. However,
implementing direct 48V-to-1V conversion necessitates an
extremely low duty cycle (approximately 2%) which poses
challenges for control precision and power stage design. This
work proposes a CMOS-based PWM generator capable of
achieving a wide duty cycle range (1% – 99%) at 10MHz. The
circuit successfully drives the EPC2045 GaN device at 1MHz,
enabling stable 48V-to-1V power conversion and offering a
compact, high-performance solution for next-generation power
management systems.

Original language	English
Title of host publication	The 10th International Conference on Integrated Circuits and Microsystems, ICICM2025
DOIs	https://doi.org/10.1109/ICICM66614.2025.11316028
Publication status	Accepted/In press - 2025

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@inproceedings{e7f5b796c5294ff8baba591782479753,

title = "CMOS PWM Controller Design for GaN-Based 48V-1V DC-DC Buck Converter",

abstract = "Gallium Nitride (GaN) devices have seen increasing adoption in applications such as space systems and data center power management, owing to their superior efficiency, highfrequency capabilities, and excellent thermal stability. The direct 48V-to-1V GaN converters are emerging as promising alternatives to conventional two-stage voltage regulation. This direct approach offers significant advantages in offering high power density and enhancing transient response. However, implementing direct 48V-to-1V conversion necessitates an extremely low duty cycle (approximately 2\%) which poses challenges for control precision and power stage design. This work proposes a CMOS-based PWM generator capable of achieving a wide duty cycle range (1\% – 99\%) at 10MHz. The circuit successfully drives the EPC2045 GaN device at 1MHz, enabling stable 48V-to-1V power conversion and offering a compact, high-performance solution for next-generation power management systems.",

author = "Guanyu Wu and Miao Cui",

year = "2025",

doi = "10.1109/ICICM66614.2025.11316028",

language = "English",

booktitle = "The 10th International Conference on Integrated Circuits and Microsystems, ICICM2025",

}

TY - GEN

T1 - CMOS PWM Controller Design for GaN-Based 48V-1V DC-DC Buck Converter

AU - Wu, Guanyu

AU - Cui, Miao

PY - 2025

Y1 - 2025

N2 - Gallium Nitride (GaN) devices have seen increasing adoption in applications such as space systems and data center power management, owing to their superior efficiency, highfrequency capabilities, and excellent thermal stability. The direct 48V-to-1V GaN converters are emerging as promising alternatives to conventional two-stage voltage regulation. This direct approach offers significant advantages in offering high power density and enhancing transient response. However, implementing direct 48V-to-1V conversion necessitates an extremely low duty cycle (approximately 2%) which poses challenges for control precision and power stage design. This work proposes a CMOS-based PWM generator capable of achieving a wide duty cycle range (1% – 99%) at 10MHz. The circuit successfully drives the EPC2045 GaN device at 1MHz, enabling stable 48V-to-1V power conversion and offering a compact, high-performance solution for next-generation power management systems.

AB - Gallium Nitride (GaN) devices have seen increasing adoption in applications such as space systems and data center power management, owing to their superior efficiency, highfrequency capabilities, and excellent thermal stability. The direct 48V-to-1V GaN converters are emerging as promising alternatives to conventional two-stage voltage regulation. This direct approach offers significant advantages in offering high power density and enhancing transient response. However, implementing direct 48V-to-1V conversion necessitates an extremely low duty cycle (approximately 2%) which poses challenges for control precision and power stage design. This work proposes a CMOS-based PWM generator capable of achieving a wide duty cycle range (1% – 99%) at 10MHz. The circuit successfully drives the EPC2045 GaN device at 1MHz, enabling stable 48V-to-1V power conversion and offering a compact, high-performance solution for next-generation power management systems.

U2 - 10.1109/ICICM66614.2025.11316028

DO - 10.1109/ICICM66614.2025.11316028

M3 - Conference Proceeding

BT - The 10th International Conference on Integrated Circuits and Microsystems, ICICM2025

ER -

CMOS PWM Controller Design for GaN-Based 48V-1V DC-DC Buck Converter

Abstract

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