CMOS-compatible Si3N4 Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO2 Cladding and Silicon Wafer Choice

Wenli Zhou; Rui Yao; Sang Lam

doi:10.1109/EDTM61175.2025.11041488

CMOS-compatible Si₃N₄ Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice

Wenli Zhou
, Rui Yao
, Sang Lam^*

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University
University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

We report computational electromagnetic (EM) investigation of silicon nitride (Si₃N₄) optical waveguides with CMOS-compatible manufacturing for ultimate optoelectronic integration on Si. By computing the electric field profiles of the fundamental mode of the Si3N4 optical waveguides, it is found about the fabrication need of 4 µm or thicker SiO₂ under-cladding layer, so as to minimise EM power loss to the resistive Si substrate. Low- or medium-resistivity (down to 0.5 Ω.cm) Si wafers are suitable choices.

Original language	English
Title of host publication	9th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331504168
DOIs	https://doi.org/10.1109/EDTM61175.2025.11041488
Publication status	Published - 2025
Event	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 - Hong Kong, Hong Kong Duration: 9 Mar 2025 → 12 Mar 2025

Conference

Conference	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025
Country/Territory	Hong Kong
City	Hong Kong
Period	9/03/25 → 12/03/25

Keywords

integrated silicon microphotonics
silicon base wafer
silicon dioxide cladding
Silicon nitride optical waveguides
substrate conductivity

Access to Document

10.1109/EDTM61175.2025.11041488

Cite this

Zhou, W., Yao, R., & Lam, S. (2025). CMOS-compatible Si₃N₄ Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM61175.2025.11041488

Zhou, Wenli ; Yao, Rui ; Lam, Sang. / CMOS-compatible Si₃N₄ Optical Waveguides : An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice. 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025.

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title = "CMOS-compatible Si3N4 Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO2 Cladding and Silicon Wafer Choice",

abstract = "We report computational electromagnetic (EM) investigation of silicon nitride (Si3N4) optical waveguides with CMOS-compatible manufacturing for ultimate optoelectronic integration on Si. By computing the electric field profiles of the fundamental mode of the Si3N4 optical waveguides, it is found about the fabrication need of 4 µm or thicker SiO2 under-cladding layer, so as to minimise EM power loss to the resistive Si substrate. Low- or medium-resistivity (down to 0.5 Ω.cm) Si wafers are suitable choices.",

keywords = "integrated silicon microphotonics, silicon base wafer, silicon dioxide cladding, Silicon nitride optical waveguides, substrate conductivity",

author = "Wenli Zhou and Rui Yao and Sang Lam",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",

year = "2025",

doi = "10.1109/EDTM61175.2025.11041488",

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Zhou, W, Yao, R & Lam, S 2025, CMOS-compatible Si₃N₄ Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice. in 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025, Hong Kong, Hong Kong, 9/03/25. https://doi.org/10.1109/EDTM61175.2025.11041488

CMOS-compatible Si₃N₄ Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice. / Zhou, Wenli; Yao, Rui ; Lam, Sang.
9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025.

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Yao, Rui

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N2 - We report computational electromagnetic (EM) investigation of silicon nitride (Si3N4) optical waveguides with CMOS-compatible manufacturing for ultimate optoelectronic integration on Si. By computing the electric field profiles of the fundamental mode of the Si3N4 optical waveguides, it is found about the fabrication need of 4 µm or thicker SiO2 under-cladding layer, so as to minimise EM power loss to the resistive Si substrate. Low- or medium-resistivity (down to 0.5 Ω.cm) Si wafers are suitable choices.

AB - We report computational electromagnetic (EM) investigation of silicon nitride (Si3N4) optical waveguides with CMOS-compatible manufacturing for ultimate optoelectronic integration on Si. By computing the electric field profiles of the fundamental mode of the Si3N4 optical waveguides, it is found about the fabrication need of 4 µm or thicker SiO2 under-cladding layer, so as to minimise EM power loss to the resistive Si substrate. Low- or medium-resistivity (down to 0.5 Ω.cm) Si wafers are suitable choices.

KW - integrated silicon microphotonics

KW - silicon base wafer

KW - silicon dioxide cladding

KW - Silicon nitride optical waveguides

KW - substrate conductivity

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DO - 10.1109/EDTM61175.2025.11041488

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PB - Institute of Electrical and Electronics Engineers Inc.

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Zhou W, Yao R , Lam S. CMOS-compatible Si₃N₄ Optical Waveguides: An Electromagnetic Study for Fabrication Considerations of SiO₂ Cladding and Silicon Wafer Choice. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc. 2025 doi: 10.1109/EDTM61175.2025.11041488