Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

Miao Cui; Yutao Cai; Sang Lam; Wen Liu; Chun Zhao; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker

doi:10.1109/EDSSC.2018.8487160

Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

Miao Cui
, Yutao Cai
, Sang Lam
, Wen Liu
, Chun Zhao
, Ivona Z. Mitrovic
, Stephen Taylor
, Paul R. Chalker

Department of Electrical and Electronic Engineering

University of Liverpool
Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

12 Citations (Scopus)

Abstract

Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al₂O₃ as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ V_th and hence to systematically study the underlying mechanism. The experimental results reveal that Δ V_th can be as high as 1.0 V at V G_max =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ V_th is frequency independent but the second onset of voltage shifts (Δ V₂) shows obvious frequency dependence.

Original language	English
Title of host publication	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538662342
DOIs	https://doi.org/10.1109/EDSSC.2018.8487160
Publication status	Published - 9 Oct 2018
Event	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China Duration: 6 Jun 2018 → 8 Jun 2018

Publication series

Name	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/Territory	China
City	Shenzhen
Period	6/06/18 → 8/06/18

Keywords

AlGaN/GaN MIS-HEMT
AlO/III-N interface traps (fast and slow) and threshold voltage hysteresis.

Access to Document

10.1109/EDSSC.2018.8487160

Cite this

Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., Taylor, S., & Chalker, P. R. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 Article 8487160 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2018.8487160

Cui, Miao ; Cai, Yutao ; Lam, Sang et al. / Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

@inproceedings{9985174169414295881c101fb64d0a0d,

title = "Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs",

abstract = "Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ Vth and hence to systematically study the underlying mechanism. The experimental results reveal that Δ Vth can be as high as 1.0 V at V Gmax =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ Vth is frequency independent but the second onset of voltage shifts (Δ V2) shows obvious frequency dependence.",

keywords = "AlGaN/GaN MIS-HEMT, AlO/III-N interface traps (fast and slow) and threshold voltage hysteresis.",

author = "Miao Cui and Yutao Cai and Sang Lam and Wen Liu and Chun Zhao and Mitrovic, \{Ivona Z.\} and Stephen Taylor and Chalker, \{Paul R.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",

year = "2018",

month = oct,

day = "9",

doi = "10.1109/EDSSC.2018.8487160",

language = "English",

series = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

}

Cui, M, Cai, Y, Lam, S , Liu, W , Zhao, C, Mitrovic, IZ, Taylor, S & Chalker, PR 2018, Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. in 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018., 8487160, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Shenzhen, China, 6/06/18. https://doi.org/10.1109/EDSSC.2018.8487160

Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. / Cui, Miao; Cai, Yutao; Lam, Sang et al.
2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8487160 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

AU - Cui, Miao

AU - Cai, Yutao

AU - Lam, Sang

AU - Liu, Wen

AU - Zhao, Chun

AU - Mitrovic, Ivona Z.

AU - Taylor, Stephen

AU - Chalker, Paul R.

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ Vth and hence to systematically study the underlying mechanism. The experimental results reveal that Δ Vth can be as high as 1.0 V at V Gmax =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ Vth is frequency independent but the second onset of voltage shifts (Δ V2) shows obvious frequency dependence.

AB - Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ Vth and hence to systematically study the underlying mechanism. The experimental results reveal that Δ Vth can be as high as 1.0 V at V Gmax =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ Vth is frequency independent but the second onset of voltage shifts (Δ V2) shows obvious frequency dependence.

KW - AlGaN/GaN MIS-HEMT

KW - AlO/III-N interface traps (fast and slow) and threshold voltage hysteresis.

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U2 - 10.1109/EDSSC.2018.8487160

DO - 10.1109/EDSSC.2018.8487160

M3 - Conference Proceeding

AN - SCOPUS:85056340543

T3 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

BT - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Y2 - 6 June 2018 through 8 June 2018

ER -

Cui M, Cai Y, Lam S , Liu W , Zhao C, Mitrovic IZ et al. Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8487160. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). doi: 10.1109/EDSSC.2018.8487160

Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

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