Characteristics of RF power amplifiers by 0.5μm SOS CMOS process

S. Lam; W. H. Ki; M. Chan

Characteristics of RF power amplifiers by 0.5μm SOS CMOS process

S. Lam^*, W. H. Ki, M. Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The properties of radio frequency (RF) power amplifier constructed by SOS MOSFET was investigated. The first characterization of RF power amplifier without body contact from a 0.5 μm SOS CMOS process was reported. The measured power gain at 1 GHz was 10.5 dBm and the power added efficiency (PAE) was 40%. The floating body effect resulted in a soft breakdown that leaded to a drop in the PAE.

Original language	English
Pages	141-142
Number of pages	2
Publication status	Published - 2001
Externally published	Yes
Event	2001 IEEE International SOI Conference - Durango, CO, United States Duration: 1 Oct 2001 → 4 Oct 2001

Conference

Conference	2001 IEEE International SOI Conference
Country/Territory	United States
City	Durango, CO
Period	1/10/01 → 4/10/01

Cite this

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title = "Characteristics of RF power amplifiers by 0.5μm SOS CMOS process",

abstract = "The properties of radio frequency (RF) power amplifier constructed by SOS MOSFET was investigated. The first characterization of RF power amplifier without body contact from a 0.5 μm SOS CMOS process was reported. The measured power gain at 1 GHz was 10.5 dBm and the power added efficiency (PAE) was 40\%. The floating body effect resulted in a soft breakdown that leaded to a drop in the PAE.",

author = "S. Lam and Ki, \{W. H.\} and M. Chan",

year = "2001",

language = "English",

pages = "141--142",

note = "2001 IEEE International SOI Conference ; Conference date: 01-10-2001 Through 04-10-2001",

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TY - CONF

T1 - Characteristics of RF power amplifiers by 0.5μm SOS CMOS process

AU - Lam, S.

AU - Ki, W. H.

AU - Chan, M.

PY - 2001

Y1 - 2001

N2 - The properties of radio frequency (RF) power amplifier constructed by SOS MOSFET was investigated. The first characterization of RF power amplifier without body contact from a 0.5 μm SOS CMOS process was reported. The measured power gain at 1 GHz was 10.5 dBm and the power added efficiency (PAE) was 40%. The floating body effect resulted in a soft breakdown that leaded to a drop in the PAE.

AB - The properties of radio frequency (RF) power amplifier constructed by SOS MOSFET was investigated. The first characterization of RF power amplifier without body contact from a 0.5 μm SOS CMOS process was reported. The measured power gain at 1 GHz was 10.5 dBm and the power added efficiency (PAE) was 40%. The floating body effect resulted in a soft breakdown that leaded to a drop in the PAE.

UR - https://www.scopus.com/pages/publications/0035173269

M3 - Paper

AN - SCOPUS:0035173269

SP - 141

EP - 142

T2 - 2001 IEEE International SOI Conference

Y2 - 1 October 2001 through 4 October 2001

ER -

Characteristics of RF power amplifiers by 0.5μm SOS CMOS process

Abstract

Conference

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