Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

Z. J. Shen; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; L. Yang; W. Y. Xu; E. G. Lim; T. Luo; Y. B. Huang

doi:10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

Z. J. Shen
, C. Zhao
, C. Z. Zhao
, I. Z. Mitrovic
, L. Yang
, W. Y. Xu
, E. G. Lim
, T. Luo
, Y. B. Huang

Xi'an Jiaotong-Liverpool University
University of Liverpool
Shenzhen University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 10⁴ s and endurance over 10² cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790838
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

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formatting
insert (key words)
style
styling

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10.1109/ICICDT.2019.8790838

Cite this

Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., Lim, E. G., Luo, T., & Huang, Y. B. (2019). Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790838 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790838

Shen, Z. J. ; Zhao, C. ; Zhao, C. Z. et al. / Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

@inproceedings{3edaf4f49226485ab927efd00f9639be,

title = "Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures",

abstract = "In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.",

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author = "Shen, \{Z. J.\} and C. Zhao and Zhao, \{C. Z.\} and Mitrovic, \{I. Z.\} and L. Yang and Xu, \{W. Y.\} and Lim, \{E. G.\} and T. Luo and Huang, \{Y. B.\}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790838",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ, Yang, L, Xu, WY, Lim, EG, Luo, T & Huang, YB 2019, Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790838, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. / Shen, Z. J.; Zhao, C.; Zhao, C. Z. et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790838 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

AU - Shen, Z. J.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Yang, L.

AU - Xu, W. Y.

AU - Lim, E. G.

AU - Luo, T.

AU - Huang, Y. B.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

AB - In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

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U2 - 10.1109/ICICDT.2019.8790838

DO - 10.1109/ICICDT.2019.8790838

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T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

Y2 - 17 June 2019 through 19 June 2019

ER -

Shen ZJ, Zhao C, Zhao CZ, Mitrovic IZ, Yang L, Xu WY et al. Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790838. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

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