TY - JOUR
T1 - Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate
AU - Zhao, Tianshi
AU - Zhao, Chun
AU - Xu, Wangying
AU - Liu, Yina
AU - Gao, Hao
AU - Mitrovic, Ivona Z.
AU - Lim, Eng Gee
AU - Yang, Li
AU - Zhao, Ce Zhou
N1 - Funding Information:
This research was funded in part by the Natural Science Foundation of China (61828401), Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program (19KJB510059), Natural Science Foundation of Jiangsu Province of China (BK20180242), the Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation (SYG201924), and the Key Program Special Fund in XJTLU (KSF‐P‐02, KSF‐T‐03, KSF‐A‐04, KSF‐A‐05, KSF‐A‐07, KSF‐A‐18). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17‐18/18).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11/3
Y1 - 2021/11/3
N2 - The highly parallel artificial neural systems based on transistor-like devices have recently attracted widespread attention due to their high-efficiency computing potential and the ability to mimic biological neurobehavior. For the past decades, plenty of breakthroughs related to synaptic transistors have been investigated and reported. In this work, a kind of photoelectronic transistor that successfully mimics the behaviors of biological synapses has been proposed and systematically analyzed. For the individual device, MXenes and the self-assembled titanium dioxide on the nanosheet surface serve as floating gate and tunneling layers, respectively. As the unit electronics of the neural network, the typical synaptic behaviors and the reliable memory stability of the synaptic transistors have been demonstrated through the voltage test. Furthermore, for the first time, the UV-responsive synaptic properties of the MXenes floating gated transistor and its applications, including conditional reflex and supervised learning, have been measured and realized. These photoelectric synapse characteristics illustrate the great potential of the device in bio-imitation vision applications. Finally, through the simulation based on an artificial neural network algorithm, the device successfully realizes the recognition application of handwritten digital images. Thus, this article provides a highly feasible solution for applying artificial synaptic devices to hardware neuromorphic networks.
AB - The highly parallel artificial neural systems based on transistor-like devices have recently attracted widespread attention due to their high-efficiency computing potential and the ability to mimic biological neurobehavior. For the past decades, plenty of breakthroughs related to synaptic transistors have been investigated and reported. In this work, a kind of photoelectronic transistor that successfully mimics the behaviors of biological synapses has been proposed and systematically analyzed. For the individual device, MXenes and the self-assembled titanium dioxide on the nanosheet surface serve as floating gate and tunneling layers, respectively. As the unit electronics of the neural network, the typical synaptic behaviors and the reliable memory stability of the synaptic transistors have been demonstrated through the voltage test. Furthermore, for the first time, the UV-responsive synaptic properties of the MXenes floating gated transistor and its applications, including conditional reflex and supervised learning, have been measured and realized. These photoelectric synapse characteristics illustrate the great potential of the device in bio-imitation vision applications. Finally, through the simulation based on an artificial neural network algorithm, the device successfully realizes the recognition application of handwritten digital images. Thus, this article provides a highly feasible solution for applying artificial synaptic devices to hardware neuromorphic networks.
KW - MXenes
KW - image recognition
KW - neuromorphic computing
KW - photoelectric plasticity
KW - synaptic transistors
UR - http://www.scopus.com/inward/record.url?scp=85112634860&partnerID=8YFLogxK
U2 - 10.1002/adfm.202106000
DO - 10.1002/adfm.202106000
M3 - Article
AN - SCOPUS:85112634860
SN - 1616-301X
VL - 31
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 45
M1 - 2106000
ER -