Atomic layer deposition of HfO2 gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

Qifeng Lu, Sang Lam, Yifei Mu, Ce Zhou Zhao, Yinchao Zhao, Yuxiao Fang, Li Yang, Steve Taylor, Paul R. Chalker

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

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