Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth

Yubin Hwang*, Eung Kwan Lee, Heechae Choi, Kyung Han Yun, Minho Lee, Yong Chae Chung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth'. Together they form a unique fingerprint.

Engineering

Material Science