TY - GEN
T1 - Anti-reflection structures fabricated by direct laser interference technology under different ambiances
AU - Wang, Dapeng
AU - Yong, Yue
AU - Zhang, Ziang
AU - Li, Dayou
AU - Maple, Carsten
AU - Wang, Zuobin
PY - 2013
Y1 - 2013
N2 - In this paper, we take the strategy of direct laser interference technology to modify the silicon surface under air and sulphur hexafluoride (SF 6) gas ambiance conditions. With the investigation of optical properties, the silicon spike structures (known as black silicon) which were fabricated in the SF6 ambiance showed the excellent ability of reducing light reflection with a broadband spectrum. For comparison, well-defined microcone structures were fabricated in the air ambiance. After hydrofluoric (HF) acid wiping off the oxides on the surface, micro cone structures have shown the anti-reflection function as well and its reflective behaviour was dependent on the structural depth relatively. Due to a high impurities concentration of spike structures obtained in the SF6 ambiance, applications of sulphur-doped black silicon would be limited. To obtain large-scale uniform structures, direct laser interference technology in the air ambiance could be an alternative.
AB - In this paper, we take the strategy of direct laser interference technology to modify the silicon surface under air and sulphur hexafluoride (SF 6) gas ambiance conditions. With the investigation of optical properties, the silicon spike structures (known as black silicon) which were fabricated in the SF6 ambiance showed the excellent ability of reducing light reflection with a broadband spectrum. For comparison, well-defined microcone structures were fabricated in the air ambiance. After hydrofluoric (HF) acid wiping off the oxides on the surface, micro cone structures have shown the anti-reflection function as well and its reflective behaviour was dependent on the structural depth relatively. Due to a high impurities concentration of spike structures obtained in the SF6 ambiance, applications of sulphur-doped black silicon would be limited. To obtain large-scale uniform structures, direct laser interference technology in the air ambiance could be an alternative.
KW - anti-reflection structures
KW - black silicon
KW - direct laser interference technology
UR - https://www.scopus.com/pages/publications/84896744100
U2 - 10.1109/3M-NANO.2013.6737388
DO - 10.1109/3M-NANO.2013.6737388
M3 - Conference Proceeding
AN - SCOPUS:84896744100
SN - 9781479912131
T3 - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013 - Conference Proceedings
SP - 82
EP - 85
BT - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013 - Conference Proceedings
PB - IEEE Computer Society
T2 - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013
Y2 - 26 August 2013 through 30 August 2013
ER -