An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Y. X. Fang; W. Y. Xu; I. Z. Mitrovic; L. Yang; C. Zhao; C. Z. Zhao

doi:10.1109/ICICDT51558.2021.9626540

An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Y. X. Fang
, W. Y. Xu
, I. Z. Mitrovic
, L. Yang
, C. Zhao
, C. Z. Zhao

Shenzhen University
University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.

Original language	English
Title of host publication	2021 International Conference on IC Design and Technology, ICICDT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665449984
DOIs	https://doi.org/10.1109/ICICDT51558.2021.9626540
Publication status	Published - 2021
Event	2021 International Conference on IC Design and Technology, ICICDT 2021 - Dresden, Germany Duration: 15 Sept 2021 → 17 Sept 2021

Publication series

Name	2021 International Conference on IC Design and Technology, ICICDT 2021

Conference

Conference	2021 International Conference on IC Design and Technology, ICICDT 2021
Country/Territory	Germany
City	Dresden
Period	15/09/21 → 17/09/21

Keywords

Gate dielectric
Solution-process
ZrLaO
inverter
radiation hardness

Access to Document

10.1109/ICICDT51558.2021.9626540

Cite this

Fang, Y. X., Xu, W. Y., Mitrovic, I. Z., Yang, L., Zhao, C., & Zhao, C. Z. (2021). An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. In 2021 International Conference on IC Design and Technology, ICICDT 2021 (2021 International Conference on IC Design and Technology, ICICDT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT51558.2021.9626540

Fang, Y. X. ; Xu, W. Y. ; Mitrovic, I. Z. et al. / An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. 2021 International Conference on IC Design and Technology, ICICDT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 International Conference on IC Design and Technology, ICICDT 2021).

@inproceedings{bfc9f5960aea459bacf73cc7e84ab231,

title = "An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment",

abstract = "In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10\% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91\% gain after 103 krad (SiO2) irradiation.",

keywords = "Gate dielectric, Solution-process, ZrLaO, inverter, radiation hardness",

author = "Fang, \{Y. X.\} and Xu, \{W. Y.\} and Mitrovic, \{I. Z.\} and L. Yang and C. Zhao and Zhao, \{C. Z.\}",

note = "Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Natural Science Foundation of Guangdong Province (2017A030310524), Guangdong Research Center for Interfacial Engineering of Functional Materials (201701), Suzhou Science and Technology programme (SYG201623), Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), Natural Science Foundation of SZU (2017001), Key Program Special Fund in XJTLU (KSF-A-04, KSF-A-05, KSF-A-07, KSF-P-02 and KSF-T-03) and the XJTLU Research Development Fund (RDF-14-02-42 and RDF-17-01-13). The author IZM acknowledges UKRI GIAA award as well as British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference on IC Design and Technology, ICICDT 2021 ; Conference date: 15-09-2021 Through 17-09-2021",

year = "2021",

doi = "10.1109/ICICDT51558.2021.9626540",

language = "English",

series = "2021 International Conference on IC Design and Technology, ICICDT 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 International Conference on IC Design and Technology, ICICDT 2021",

}

Fang, YX, Xu, WY, Mitrovic, IZ, Yang, L , Zhao, C & Zhao, CZ 2021, An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. in 2021 International Conference on IC Design and Technology, ICICDT 2021. 2021 International Conference on IC Design and Technology, ICICDT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 International Conference on IC Design and Technology, ICICDT 2021, Dresden, Germany, 15/09/21. https://doi.org/10.1109/ICICDT51558.2021.9626540

An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. / Fang, Y. X.; Xu, W. Y.; Mitrovic, I. Z. et al.
2021 International Conference on IC Design and Technology, ICICDT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 International Conference on IC Design and Technology, ICICDT 2021).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

AU - Fang, Y. X.

AU - Xu, W. Y.

AU - Mitrovic, I. Z.

AU - Yang, L.

AU - Zhao, C.

AU - Zhao, C. Z.

N1 - Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Natural Science Foundation of Guangdong Province (2017A030310524), Guangdong Research Center for Interfacial Engineering of Functional Materials (201701), Suzhou Science and Technology programme (SYG201623), Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), Natural Science Foundation of SZU (2017001), Key Program Special Fund in XJTLU (KSF-A-04, KSF-A-05, KSF-A-07, KSF-P-02 and KSF-T-03) and the XJTLU Research Development Fund (RDF-14-02-42 and RDF-17-01-13). The author IZM acknowledges UKRI GIAA award as well as British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: © 2021 IEEE.

PY - 2021

Y1 - 2021

N2 - In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.

AB - In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.

KW - Gate dielectric

KW - Solution-process

KW - ZrLaO

KW - inverter

KW - radiation hardness

UR - https://www.scopus.com/pages/publications/85123636686

U2 - 10.1109/ICICDT51558.2021.9626540

DO - 10.1109/ICICDT51558.2021.9626540

M3 - Conference Proceeding

AN - SCOPUS:85123636686

T3 - 2021 International Conference on IC Design and Technology, ICICDT 2021

BT - 2021 International Conference on IC Design and Technology, ICICDT 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Conference on IC Design and Technology, ICICDT 2021

Y2 - 15 September 2021 through 17 September 2021

ER -

Fang YX, Xu WY, Mitrovic IZ, Yang L , Zhao C, Zhao CZ. An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. In 2021 International Conference on IC Design and Technology, ICICDT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 International Conference on IC Design and Technology, ICICDT 2021). doi: 10.1109/ICICDT51558.2021.9626540

An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Abstract

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Keywords

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