Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

Z. J. Shen; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; L. Yang; W. Y. Xu; E. G. Lim; T. Luo; Y. B. Huang

doi:10.1109/EUROSOI-ULIS45800.2019.9041877

Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

Z. J. Shen
, C. Zhao^*
, C. Z. Zhao
, I. Z. Mitrovic
, L. Yang
, W. Y. Xu
, E. G. Lim
, T. Luo
, Y. B. Huang

^*Corresponding author for this work

Shenzhen University
University of Liverpool
Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 10⁴ s and endurance over 10² cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041877
Publication status	Published - Apr 2019
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 1 Apr 2019 → 3 Apr 2019

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	1/04/19 → 3/04/19

Keywords

graphene oxide
low fabrication temperature
solution-processed method

Access to Document

10.1109/EUROSOI-ULIS45800.2019.9041877

Cite this

Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., Lim, E. G., Luo, T., & Huang, Y. B. (2019). Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 Article 9041877 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041877

Shen, Z. J. ; Zhao, C. ; Zhao, C. Z. et al. / Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

@inproceedings{2cfa70f122a54779b95927d19cf59dce,

title = "Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature",

abstract = "In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 104 s and endurance over 102 cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.",

keywords = "graphene oxide, low fabrication temperature, solution-processed method",

author = "Shen, \{Z. J.\} and C. Zhao and Zhao, \{C. Z.\} and Mitrovic, \{I. Z.\} and L. Yang and Xu, \{W. Y.\} and Lim, \{E. G.\} and T. Luo and Huang, \{Y. B.\}",

note = "Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

doi = "10.1109/EUROSOI-ULIS45800.2019.9041877",

language = "English",

series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

}

Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ, Yang, L, Xu, WY, Lim, EG, Luo, T & Huang, YB 2019, Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041877, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 1/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041877

Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. / Shen, Z. J.; Zhao, C.; Zhao, C. Z. et al.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041877 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

AU - Shen, Z. J.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Yang, L.

AU - Xu, W. Y.

AU - Lim, E. G.

AU - Luo, T.

AU - Huang, Y. B.

N1 - Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/4

Y1 - 2019/4

N2 - In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 104 s and endurance over 102 cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.

AB - In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 104 s and endurance over 102 cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.

KW - graphene oxide

KW - low fabrication temperature

KW - solution-processed method

UR - https://www.scopus.com/pages/publications/85083210495

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041877

DO - 10.1109/EUROSOI-ULIS45800.2019.9041877

M3 - Conference Proceeding

AN - SCOPUS:85083210495

T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Y2 - 1 April 2019 through 3 April 2019

ER -

Shen ZJ, Zhao C, Zhao CZ, Mitrovic IZ, Yang L, Xu WY et al. Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041877. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). doi: 10.1109/EUROSOI-ULIS45800.2019.9041877

Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

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