AgTa0.5Nb0.5O3 thin film microwave coplanar waveguide tunable capacitors

Jang Yong Kim; Alexander M. Grishin

doi:10.1080/10584580500413624

AgTa_0.5Nb_0.5O₃ thin film microwave coplanar waveguide tunable capacitors

Jang Yong Kim, Alexander M. Grishin^*

^*Corresponding author for this work

KTH Royal Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

400 nm thick AgTa_0.5Nb_0.5O₃ (ATN) films have been prepared by pulsed laser deposition technique on LaAlO₃ (001) and sapphire (Al₂O₃-0112, r-cut) single crystal substrates. Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO₃ films and preferentially (001) orientation of ATN/Al ₂O₃ films. Voltage tunable microwave capacitors were fabricated by lift-off technique on the surface of ferroelectric films. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequency dispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm, loss tangent ∼0.068 @ 20 GHz, K-factor = tunability/tanδ is ranged from 124% @ 10 GHz to 35% @ 40 GHz.

Original language	English
Pages (from-to)	13-20
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	77
DOIs	https://doi.org/10.1080/10584580500413624
Publication status	Published - 2006
Externally published	Yes
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

Keywords

Coplanar waveguide
Ferroelectric thin films
Microwave on-wafer test
Photolithography
Pulsed laser deposition
Scatering parameter measurements
Silver tan-talate niobates
Voltage tunable device

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10.1080/10584580500413624

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@article{a725040638124c7c97a5e103c1643f0d,

title = "AgTa0.5Nb0.5O3 thin film microwave coplanar waveguide tunable capacitors",

abstract = "400 nm thick AgTa0.5Nb0.5O3 (ATN) films have been prepared by pulsed laser deposition technique on LaAlO3 (001) and sapphire (Al2O3-0112, r-cut) single crystal substrates. Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO3 films and preferentially (001) orientation of ATN/Al 2O3 films. Voltage tunable microwave capacitors were fabricated by lift-off technique on the surface of ferroelectric films. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequency dispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm, loss tangent ∼0.068 @ 20 GHz, K-factor = tunability/tanδ is ranged from 124% @ 10 GHz to 35% @ 40 GHz.",

keywords = "Coplanar waveguide, Ferroelectric thin films, Microwave on-wafer test, Photolithography, Pulsed laser deposition, Scatering parameter measurements, Silver tan-talate niobates, Voltage tunable device",

author = "Kim, {Jang Yong} and Grishin, {Alexander M.}",

year = "2006",

doi = "10.1080/10584580500413624",

language = "English",

volume = "77",

pages = "13--20",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

}

TY - JOUR

T1 - AgTa0.5Nb0.5O3 thin film microwave coplanar waveguide tunable capacitors

AU - Kim, Jang Yong

AU - Grishin, Alexander M.

PY - 2006

Y1 - 2006

N2 - 400 nm thick AgTa0.5Nb0.5O3 (ATN) films have been prepared by pulsed laser deposition technique on LaAlO3 (001) and sapphire (Al2O3-0112, r-cut) single crystal substrates. Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO3 films and preferentially (001) orientation of ATN/Al 2O3 films. Voltage tunable microwave capacitors were fabricated by lift-off technique on the surface of ferroelectric films. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequency dispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm, loss tangent ∼0.068 @ 20 GHz, K-factor = tunability/tanδ is ranged from 124% @ 10 GHz to 35% @ 40 GHz.

AB - 400 nm thick AgTa0.5Nb0.5O3 (ATN) films have been prepared by pulsed laser deposition technique on LaAlO3 (001) and sapphire (Al2O3-0112, r-cut) single crystal substrates. Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO3 films and preferentially (001) orientation of ATN/Al 2O3 films. Voltage tunable microwave capacitors were fabricated by lift-off technique on the surface of ferroelectric films. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequency dispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm, loss tangent ∼0.068 @ 20 GHz, K-factor = tunability/tanδ is ranged from 124% @ 10 GHz to 35% @ 40 GHz.

KW - Coplanar waveguide

KW - Ferroelectric thin films

KW - Microwave on-wafer test

KW - Photolithography

KW - Pulsed laser deposition

KW - Scatering parameter measurements

KW - Silver tan-talate niobates

KW - Voltage tunable device

UR - http://www.scopus.com/inward/record.url?scp=33645505627&partnerID=8YFLogxK

U2 - 10.1080/10584580500413624

DO - 10.1080/10584580500413624

M3 - Conference article

AN - SCOPUS:33645505627

SN - 1058-4587

VL - 77

SP - 13

EP - 20

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -

AgTa_0.5Nb_0.5O₃ thin film microwave coplanar waveguide tunable capacitors

Abstract

Keywords

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