A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

Zhonghao Sun; Huolin Huang; Nan Sun; Pengcheng Tao; Cezhou Zhao; Yung C. Liang

doi:10.3390/mi10120848

A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

Zhonghao Sun
, Huolin Huang^*
, Nan Sun
, Pengcheng Tao
, Cezhou Zhao
, Yung C. Liang

^*Corresponding author for this work

Dalian University of Technology
National University of Singapore

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

Original language	English
Article number	848
Journal	Micromachines
Volume	10
Issue number	12
DOIs	https://doi.org/10.3390/mi10120848
Publication status	Published - 1 Dec 2019

Keywords

Gallium nitride
High electron mobility transistors
Normally-off operation
Vertical gate structure
Wide-bandgap semiconductor

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10.3390/mi10120848

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@article{adae5ab9dccd48b48abbc792be680aae,

title = "A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure",

abstract = "A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.",

keywords = "Gallium nitride, High electron mobility transistors, Normally-off operation, Vertical gate structure, Wide-bandgap semiconductor",

author = "Zhonghao Sun and Huolin Huang and Nan Sun and Pengcheng Tao and Cezhou Zhao and Liang, \{Yung C.\}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = dec,

day = "1",

doi = "10.3390/mi10120848",

language = "English",

volume = "10",

journal = "Micromachines",

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TY - JOUR

T1 - A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

AU - Sun, Zhonghao

AU - Huang, Huolin

AU - Sun, Nan

AU - Tao, Pengcheng

AU - Zhao, Cezhou

AU - Liang, Yung C.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

AB - A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

KW - Gallium nitride

KW - High electron mobility transistors

KW - Normally-off operation

KW - Vertical gate structure

KW - Wide-bandgap semiconductor

UR - https://www.scopus.com/pages/publications/85079181689

U2 - 10.3390/mi10120848

DO - 10.3390/mi10120848

M3 - Article

AN - SCOPUS:85079181689

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 12

M1 - 848

ER -

A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

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Keywords

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