A Monolithically Integrated GaN MIS-HEMT DFF Circuit for High Temperature and High Frequency Applications

Yihao Xu; Zhengxuan  Li; Jie Jiao; Qiyuan Cui; Pingyu Cao; Kepeng  Zhao; Yinchao Zhao; Miao Cui

A Monolithically Integrated GaN MIS-HEMT DFF Circuit for High Temperature and High Frequency Applications

Yihao Xu
, Zhengxuan Li
, Jie Jiao
, Qiyuan Cui
, Pingyu Cao
, Kepeng Zhao
, Yinchao Zhao
, Miao Cui^*

^*Corresponding author for this work

Xi'an Jiaotong-Liverpool University
Xi'an Jiaotong‐Liverpool University
Xi'an Jiatong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

This paper presents a monolithically integrated D-type flip-flop (DFF) based on GaN MIS-HEMT technology, designed for high-temperature and high-frequency operation. The circuit, employing both depletion- and enhancement-mode MIS-HEMTs, was evaluated up to 200 °C and 500 kHz. Key metrics including propagation delay and signal integrity were characterized. The DFF maintains stable DC margins across 25–200 °C and 1–500 kHz. Rise time increases with frequency from 0.32 μs at 10 kHz to 0.59 μs at 200 kHz with little temperature dependence, while fall time show a small variation from 0.13-0.35 μs. These results demonstrate the feasibility of GaN MIS-HEMT sequential logic under thermal and switching test conditions.

Original language	English
Title of host publication	2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
Publication status	Accepted/In press - 2025

Cite this

@inproceedings{eef45e7ddf4540a09bf3775b62b0eba4,

title = "A Monolithically Integrated GaN MIS-HEMT DFF Circuit for High Temperature and High Frequency Applications",

abstract = "This paper presents a monolithically integrated D-type flip-flop (DFF) based on GaN MIS-HEMT technology, designed for high-temperature and high-frequency operation. The circuit, employing both depletion- and enhancement-mode MIS-HEMTs, was evaluated up to 200 °C and 500 kHz. Key metrics including propagation delay and signal integrity were characterized. The DFF maintains stable DC margins across 25–200 °C and 1–500 kHz. Rise time increases with frequency from 0.32 μs at 10 kHz to 0.59 μs at 200 kHz with little temperature dependence, while fall time show a small variation from 0.13-0.35 μs. These results demonstrate the feasibility of GaN MIS-HEMT sequential logic under thermal and switching test conditions.",

author = "Yihao Xu and Zhengxuan Li and Jie Jiao and Qiyuan Cui and Pingyu Cao and Kepeng Zhao and Yinchao Zhao and Miao Cui",

year = "2025",

language = "English",

booktitle = "2025 22nd China International Forum on Solid State Lighting \& 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)",

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A Monolithically Integrated GaN MIS-HEMT DFF Circuit for High Temperature and High Frequency Applications. / Xu, Yihao; Li, Zhengxuan ; Jiao, Jie et al.
2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). 2025.

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - A Monolithically Integrated GaN MIS-HEMT DFF Circuit for High Temperature and High Frequency Applications

AU - Xu, Yihao

AU - Li, Zhengxuan

AU - Jiao, Jie

AU - Cui, Qiyuan

AU - Cao, Pingyu

AU - Zhao, Kepeng

AU - Zhao, Yinchao

AU - Cui, Miao

PY - 2025

Y1 - 2025

N2 - This paper presents a monolithically integrated D-type flip-flop (DFF) based on GaN MIS-HEMT technology, designed for high-temperature and high-frequency operation. The circuit, employing both depletion- and enhancement-mode MIS-HEMTs, was evaluated up to 200 °C and 500 kHz. Key metrics including propagation delay and signal integrity were characterized. The DFF maintains stable DC margins across 25–200 °C and 1–500 kHz. Rise time increases with frequency from 0.32 μs at 10 kHz to 0.59 μs at 200 kHz with little temperature dependence, while fall time show a small variation from 0.13-0.35 μs. These results demonstrate the feasibility of GaN MIS-HEMT sequential logic under thermal and switching test conditions.

AB - This paper presents a monolithically integrated D-type flip-flop (DFF) based on GaN MIS-HEMT technology, designed for high-temperature and high-frequency operation. The circuit, employing both depletion- and enhancement-mode MIS-HEMTs, was evaluated up to 200 °C and 500 kHz. Key metrics including propagation delay and signal integrity were characterized. The DFF maintains stable DC margins across 25–200 °C and 1–500 kHz. Rise time increases with frequency from 0.32 μs at 10 kHz to 0.59 μs at 200 kHz with little temperature dependence, while fall time show a small variation from 0.13-0.35 μs. These results demonstrate the feasibility of GaN MIS-HEMT sequential logic under thermal and switching test conditions.

M3 - Conference Proceeding

BT - 2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

ER -