TY - GEN
T1 - A Monolithically Integrated 3-Transistor Voltage Reference Generator Based on p-GaN HEMT Technology
AU - Cao, Pingyu
AU - Xu, Yihao
AU - Zhao, Kepeng
AU - Van Zalinge, Harm
AU - Zhang, Ping
AU - Cui, Miao
AU - Xue, Fei
N1 - Publisher Copyright:
©2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper proposes a monolithically integrated voltage reference generator that consists of two depletion-mode and one enhancement-mode GaN HEMTs, capable of operating at various supply voltages. The proposed work is based on p-type GaN gate technology that will decrease the power loss of GaN devices. A stable reference voltage of 2.1 V was experimentally achieved with a high line sensitivity (0.2 %/V). Moreover, the power supply rejection ratio is larger than 42 dB at a frequency variation from 100 kHz to 1 MHz. The proposed circuit exhibits a small power consumption, and the occupied chip area of the GaN voltage reference generator is less than 0.1 mm2. This work demonstrates a stable and effective voltage reference generator, which would be conductive to implement complex GaN integrated circuits.
AB - This paper proposes a monolithically integrated voltage reference generator that consists of two depletion-mode and one enhancement-mode GaN HEMTs, capable of operating at various supply voltages. The proposed work is based on p-type GaN gate technology that will decrease the power loss of GaN devices. A stable reference voltage of 2.1 V was experimentally achieved with a high line sensitivity (0.2 %/V). Moreover, the power supply rejection ratio is larger than 42 dB at a frequency variation from 100 kHz to 1 MHz. The proposed circuit exhibits a small power consumption, and the occupied chip area of the GaN voltage reference generator is less than 0.1 mm2. This work demonstrates a stable and effective voltage reference generator, which would be conductive to implement complex GaN integrated circuits.
UR - https://www.scopus.com/pages/publications/85217155801
U2 - 10.1109/SSLCHINAIFWS64644.2024.10835326
DO - 10.1109/SSLCHINAIFWS64644.2024.10835326
M3 - Conference Proceeding
AN - SCOPUS:85217155801
T3 - Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
SP - 336
EP - 338
BT - Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
Y2 - 18 November 2024 through 21 November 2024
ER -