@inproceedings{c1da22ee8d684e958cc7f58af69d3ac9,
title = "A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs",
abstract = "A novel GaN power IC platform on engineered bulk Si (EBUS) substrate is demonstrated for monolithic integration of 200-V high-side and low-side p-GaN HEMTs of a half-bridge circuit. The engineered substrate features a P+-N-doping profile realized by P-Type implantation into an N-Type (111) Si wafer. The P+ Si layer is then split into P+ islands using deep trenches and are effectively isolated through back-To-back PN junctions. The P+ island provides a local electrical substrate for the overlaying GaN HEMT, while all GaN HEMTs share the same bulk Si wafer; such configuration enables monolithic GaN power integration with eliminated crosstalk associated with conventional bulk Si that serves as a common electrical substrate.",
author = "Gang Lyu and Jin Wei and Wenjie Song and Zheyang Zheng and Li Zhang and Jie Zhang and Yan Cheng and Sirui Feng and Ng, \{Yat Hon\} and Tao Chen and Kailun Zhong and Jiapeng Liu and Rong Zeng and Chen, \{Kevin J.\}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720505",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5.2.1--5.2.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
}