A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.