A 2.5 ppm/°C voltage reference combining traditional bgr and ztc mosfet high-order curvature compensation

This brief presents a voltage reference with high-order curvature compensation based on the zero temperature coefficient (ZTC) of MOSFET. The proposed voltage reference uses a conventional current reference to generate a constant current as of the bias of ZTCMOS. A curvature compensation method based on the α power model is combined with the conventional curvature compensation method to obtain a low temperature coefficient. Test results of the proposed voltage reference fabricated with the CSMC 0.18μ m CMOS process demonstrate that the output voltage is 628mV. The trimmed temperature coefficient achieves 2.5 ppm/°C. The line sensitivity is 0.03 %/V, the chip area is 0.024 mm2, power consumption is 77 μ W. The simulated power supply rejection ratio (PSRR) reaches -91.4 dB at 100 MHz.