集成过压保护的氮化镓器件驱动电路

Translated title of the contribution: Integrated overvoltage protected gallium nitride device drive circuit

Yuhao Zhu (Inventor), Miao Cui (Inventor), Zhicheng Fang (Inventor), Haodong Su (Inventor), Wen Liu (Inventor)

Research output: Patent

Translated title of the contributionIntegrated overvoltage protected gallium nitride device drive circuit
Original languageChinese (Simplified)
Patent granted numberCN114024541B
Validity date18/11/41
Publication statusPublished - 3 Jan 2025

Cite this