自驱动摩擦纳米发电突触晶体管

Translated title of the contribution: Self-driven rubbing nano-generated synaptic transistor

Research output: Patent

Translated title of the contributionSelf-driven rubbing nano-generated synaptic transistor
Original languageChinese (Simplified)
Patent granted numberCN112201696B
Validity date8/12/40
Publication statusPublished - 12 Mar 2021

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