Abstract
This chapter introduces the designs and examples of the class E and the class AB power amplifier frequently used in radio frequency integrated circuits (RFIC), followed by the power combination and distributed power amplifiers used in the monolithic microwave integrated circuits (MMIC). The class E power amplifier works below the frequency of 1 GHz with the co-design of on-chip, off-chip components and the packaging. The design flow from front-end to back-end is detailed. The class AB amplifier works above 1 GHz using lump element design with all on-chip components. The power combination power amplifier works at Ka band (26.5 - 40 GHz) with balanced structure, which is detailed introduced in the front-end and back-end design flow.
| Translated title of the contribution | Module 7 Radio Frequency Power Amplifier |
|---|---|
| Original language | Chinese (Simplified) |
| Title of host publication | 射频集成电路设计工程实例 |
| Editors | 小鹏 虞, 晶 金, 征浩 鲁, 江涛 皇甫, 超 杨, 江敏 顾 |
| Place of Publication | Beijing |
| Publisher | 中国高等教育出版社 |
| Chapter | 7 |
| Pages | 283-363 |
| Number of pages | 81 |
| ISBN (Print) | 978-7-04-064005-2 |
| Publication status | Accepted/In press - 31 Dec 2024 |
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