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增强栅控能力的p型氮化镓器件及其制作方法

Translated title of the contribution: P-type gallium nitride device with enhanced gate control capability and fabrication method thereof
  • Yuanlei Zhang (Inventor)
  • , Weisheng Wang (Inventor)
  • , Zhiwei Sun (Inventor)
  • , Fan Li (Inventor)
  • , Yinchao Zhao (Inventor)
  • , Wen Liu (Inventor)
  • NA

Research output: Patent

Translated title of the contributionP-type gallium nitride device with enhanced gate control capability and fabrication method thereof
Original languageChinese (Simplified)
Patent granted numberCN114759089B
Validity date21/04/42
Publication statusPublished - 11 Nov 2025

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