| Translated title of the contribution | P-type gallium nitride device with enhanced gate control capability and fabrication method thereof |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN114759089B |
| Validity date | 21/04/42 |
| Publication status | Published - 11 Nov 2025 |
增强栅控能力的p型氮化镓器件及其制作方法
Yuanlei Zhang (Inventor), Weisheng Wang (Inventor), Zhiwei Sun (Inventor), Fan Li (Inventor), Yinchao Zhao (Inventor), Wen Liu (Inventor)
Research output: Patent