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基于氧化锆和氧化镧的透明薄膜晶体管器件及其制备方法

Translated title of the contribution: Transparent thin film transistor device based on zirconium oxide and lanthanum oxide and preparation method thereof
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Research output: Patent

Translated title of the contributionTransparent thin film transistor device based on zirconium oxide and lanthanum oxide and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN111129160B
Validity date17/12/39
Publication statusPublished - 13 Oct 2023

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