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一种P型沟道氮化镓器件

Translated title of the contribution: P-type channel gallium nitride device
  • Yuanlei Zhang (Inventor)
  • , Yucong Wang (Inventor)
  • , Fan Li (Inventor)
  • , Yinchao Zhao (Inventor)
  • , Wen Liu (Inventor)
  • NA

Research output: Patent

Translated title of the contributionP-type channel gallium nitride device
Original languageChinese (Simplified)
Patent granted numberCN216054722U
Validity date20/08/31
Publication statusPublished - 15 Mar 2022

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