一种P型沟道氮化镓器件

Translated title of the contribution: P-type channel gallium nitride device

Yuanlei Zhang (Inventor), Yucong Wang (Inventor), Fan Li (Inventor), Yinchao Zhao (Inventor), Wen Liu (Inventor)

Research output: Patent

Translated title of the contributionP-type channel gallium nitride device
Original languageChinese (Simplified)
Patent granted numberCN216054722U
Validity date20/08/31
Publication statusPublished - 15 Mar 2022

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