一种鳍式场效应晶体管及其制备方法

Translated title of the contribution: a fin-type field-effect transistor and a preparation method thereof

Fan Li (Inventor), Wen Liu (Inventor), Ang Li (Inventor), Weisheng Wang (Inventor), Yifei Yin (Inventor)

Research output: Patent

Translated title of the contributiona fin-type field-effect transistor and a preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN116666436B
Validity date24/07/43
Publication statusPublished - 17 Oct 2023

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