一种锗基MOS器件衬底的表面钝化方法及得到的锗基MOS器件

Translated title of the contribution: Germanium base MOS device
  • Qifeng Lu (Inventor)
  • , Jingjin Wu (Inventor)
  • , Cezhou Zhao (Inventor)

Research output: Patent

Translated title of the contributionGermanium base MOS device
Original languageChinese (Simplified)
Patent granted numberCN205177850U
Validity date9/10/25
Publication statusPublished - 2 Mar 2016

Cite this