| Translated title of the contribution | Thin film transistor device capable of improving radiation resistance through hydrogen peroxide and preparation method |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN110416310B |
| Validity date | 26/06/39 |
| Publication status | Published - 13 Sept 2024 |
一种用双氧水提高抗辐射性的薄膜晶体管器件及制备方法
Yuxiao Fang (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor)
Research output: Patent