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一种氮化镓高电子迁移率晶体管及其制备方法与应用

Translated title of the contribution: Gallium nitride high electron mobility transistor and preparation method and application thereof
  • Fan Li (Inventor)
  • , Yuanlei Zhang (Inventor)
  • , Wen Liu (Inventor)
  • , Cezhou Zhao (Inventor)
  • NA

Research output: Patent

Translated title of the contributionGallium nitride high electron mobility transistor and preparation method and application thereof
Original languageChinese (Simplified)
Patent granted numberCN113437147B
Validity date25/06/41
Publication statusPublished - 10 Sept 2024

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