| Translated title of the contribution | A p-GaN HEMT device with oxygen passivation and gate self-alignment and preparation method thereof |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN115472680B |
| Validity date | 19/09/42 |
| Publication status | Published - 19 Dec 2025 |
一种氧气钝化加栅极自对准的p-GaN HEMT器件及其制备方法
Fan Li (Inventor), Pingyu Cao (Inventor), Yuanlei Zhang (Inventor), Wen Liu (Inventor)
Research output: Patent