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一种氧气钝化加栅极自对准的p-GaN HEMT器件及其制备方法

Translated title of the contribution: A p-GaN HEMT device with oxygen passivation and gate self-alignment and preparation method thereof
  • Fan Li (Inventor)
  • , Pingyu Cao (Inventor)
  • , Yuanlei Zhang (Inventor)
  • , Wen Liu (Inventor)
  • NA

Research output: Patent

Translated title of the contributionA p-GaN HEMT device with oxygen passivation and gate self-alignment and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN115472680B
Validity date19/09/42
Publication statusPublished - 19 Dec 2025

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