一种提升氮化镓晶体管击穿电压的方法

Translated title of the contribution: Method for improving breakdown voltage of gallium nitride transistor

Yutao Cai (Inventor), Yang Wang (Inventor), Wen Liu (Inventor), Cezhou Zhao (Inventor)

Research output: Patent

Translated title of the contributionMethod for improving breakdown voltage of gallium nitride transistor
Original languageChinese (Simplified)
Patent granted numberCN110648914B
Validity date5/09/39
Publication statusPublished - 11 Apr 2023

Cite this