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一种提升氮化镓晶体管击穿电压的方法

Translated title of the contribution: Method for improving breakdown voltage of gallium nitride transistor
  • Yutao Cai (Inventor)
  • , Yang Wang (Inventor)
  • , Wen Liu (Inventor)
  • , Cezhou Zhao (Inventor)
  • NA

Research output: Patent

Translated title of the contributionMethod for improving breakdown voltage of gallium nitride transistor
Original languageChinese (Simplified)
Patent granted numberCN110648914B
Validity date5/09/39
Publication statusPublished - 11 Apr 2023

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