一种掺杂金属氧化物的阻变式随机存取存储器及制备方法

Translated title of the contribution: Resistive random access memory doped with metal oxide and preparation method thereof

Research output: Patent

Translated title of the contribution	Resistive random access memory doped with metal oxide and preparation method thereof
Original language	Chinese (Simplified)
Patent granted number	CN110299448B
Validity date	26/06/39
Publication status	Published - 31 Dec 2024

Cite this

@misc{2243a3acd4dc4a829c7aafddb168127b,

title = "一种掺杂金属氧化物的阻变式随机存取存储器及制备方法",

author = "Zongjie Shen and Chun Zhao and Cezhou Zhao and Li Yang and Tian Luo and Yi Zhang and Yanbo Huang",

year = "2024",

month = dec,

day = "31",

language = "简体中文",

type = "Patent",

note = "CN110299448B",

}