一种掺杂金属氧化物的阻变式随机存取存储器及制备方法

Translated title of the contribution: Resistive random access memory doped with metal oxide and preparation method thereof
  • Zongjie Shen (Inventor)
  • , Chun Zhao (Inventor)
  • , Cezhou Zhao (Inventor)
  • , Li Yang (Inventor)
  • , Tian Luo (Inventor)
  • , Yi Zhang (Inventor)
  • , Yanbo Huang (Inventor)

Research output: Patent

Translated title of the contributionResistive random access memory doped with metal oxide and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN110299448B
Validity date26/06/39
Publication statusPublished - 31 Dec 2024

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