Skip to main navigation Skip to search Skip to main content

一种实现低导通电阻的增强型氮化镓晶体管的方法

Translated title of the contribution: Method for realizing enhanced gallium nitride transistor with low on-resistance
  • Yutao Cai (Inventor)
  • , Yang Wang (Inventor)
  • , Wen Liu (Inventor)
  • , Cezhou Zhao (Inventor)
  • NA

Research output: Patent

Translated title of the contributionMethod for realizing enhanced gallium nitride transistor with low on-resistance
Original languageChinese (Simplified)
Patent granted numberCN110676172B
Validity date5/09/39
Publication statusPublished - 30 Jun 2023

Cite this