| Translated title of the contribution | High-performance thin film transistor based on nano-cluster insulating layer |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN209747523U |
| Validity date | 12/04/29 |
| Publication status | Published - 6 Dec 2019 |
一种基于纳米簇绝缘层的高性能薄膜晶体管
Research output: Patent