| Translated title of the contribution | High-performance thin film transistor based on nano-cluster insulating layer and preparation method thereof |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN110061061B |
| Validity date | 12/04/39 |
| Publication status | Published - 13 Sept 2024 |
一种基于纳米簇绝缘层的高性能薄膜晶体管及制备方法
Research output: Patent