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一种基于硅酸铪的金属氧化物半导体电容器件及制备方法

Translated title of the contribution: Hafnium-silicate-based metal oxide semiconductor capacitor device and preparation method thereof
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Research output: Patent

Translated title of the contributionHafnium-silicate-based metal oxide semiconductor capacitor device and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN110137156B
Validity date12/04/39
Publication statusPublished - 13 Sept 2024

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